Integrated Balanced FETs for Broadband Millimeter Wave Amplifiers.
Final rept. 1 Apr 80-30 Jun 81,
VARIAN ASSOCIATES INC PALO ALTO CA SOLID STATE LAB
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Using electron-beam exposure and MBE GaAs, balanced FETs were designed and fabricated. While the devices exhibited excellent dc characteristics, their single-sided rf performance was not up to expectations, for reasons yet to be determined. This report is an interim account of a program being continued under a different contract number N00014-81-C-0270.
- Electrical and Electronic Equipment
- Solid State Physics