Accession Number:
ADA106695
Title:
Deep Impurity States in Gallium Arsenide.
Descriptive Note:
Final rept. 1 Jun 76-31 May 80,
Corporate Author:
MASSACHUSETTS UNIV AMHERST DEPT OF PHYSICS AND ASTRONOMY
Personal Author(s):
Report Date:
1981-10-01
Pagination or Media Count:
94.0
Abstract:
We have studied opto-electronic properties of semi-insulating gallium arsenide, including oxygen doped, chromium doped, undoped, and ion-bombarded materials. We have found that the luminescence from chromium-doped samples has much find structure which had not been previously seen this led to a better understanding of chromium complexing and of local lattice vibration and Fano anti-resonance at a substitutional Cr site. We have identified two other luminescence bands as related to oxygen and native defects respectively. Photoconductivity and photo-Hall studies have elucidated some of the optical transitions and showed evidence that much of the spectral shape is due to quenching effects. DLTS and thermally-stimulated current measurements were used to study oxygen doped and undoped semi-insulating GaAs, revealing a variety of deep and medium-deep levels. A combination of theory and experiment has proved valuable to the understanding of the photoionization cross sections, Fano anti-resonance, and local mode coupling of the deep impurity states. Author
Descriptors:
- *GALLIUM ARSENIDES
- *DOPING
- *PHOTOCONDUCTIVITY
- *CHEMILUMINESCENCE
- COUPLING(INTERACTION)
- OPTICAL PROPERTIES
- COMPLEX COMPOUNDS
- ELECTROOPTICS
- INSULATION
- CRYSTAL LATTICES
- SHAPE
- IMPURITIES
- ION IMPLANTATION
- QUENCHING
- OXYGEN
- SPECTRA
- DEFECTS(MATERIALS)
- CROSS SECTIONS
- CHROMIUM
- PHOTOIONIZATION
- CURVES(GEOMETRY)
Subject Categories:
- Radiation and Nuclear Chemistry
- Atomic and Molecular Physics and Spectroscopy