Accession Number:

ADA106695

Title:

Deep Impurity States in Gallium Arsenide.

Descriptive Note:

Final rept. 1 Jun 76-31 May 80,

Corporate Author:

MASSACHUSETTS UNIV AMHERST DEPT OF PHYSICS AND ASTRONOMY

Personal Author(s):

Report Date:

1981-10-01

Pagination or Media Count:

94.0

Abstract:

We have studied opto-electronic properties of semi-insulating gallium arsenide, including oxygen doped, chromium doped, undoped, and ion-bombarded materials. We have found that the luminescence from chromium-doped samples has much find structure which had not been previously seen this led to a better understanding of chromium complexing and of local lattice vibration and Fano anti-resonance at a substitutional Cr site. We have identified two other luminescence bands as related to oxygen and native defects respectively. Photoconductivity and photo-Hall studies have elucidated some of the optical transitions and showed evidence that much of the spectral shape is due to quenching effects. DLTS and thermally-stimulated current measurements were used to study oxygen doped and undoped semi-insulating GaAs, revealing a variety of deep and medium-deep levels. A combination of theory and experiment has proved valuable to the understanding of the photoionization cross sections, Fano anti-resonance, and local mode coupling of the deep impurity states. Author

Subject Categories:

  • Radiation and Nuclear Chemistry
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE