Characterization of Power MESFETs at 21 GHz.
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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This report describes the development of GaAs MESFET power amplifiers at 21 GHz. Techniques for making large-signal loadpull and S parameter measurements at these frequencies, and the measured device characteristics are presented. A unique method of obtaining accurate gain and power measurements is discussed. Design methods and data are presented on 21 GHz amplifiers with more CW power and higher efficiency than previously achieved. Author
- Electrical and Electronic Equipment
- Solid State Physics