Accession Number:

ADA106546

Title:

Heterojunctions in Semiconductors.

Descriptive Note:

Final rept. 15 Sep 77-31 Dec 79,

Corporate Author:

OREGON STATE UNIV CORVALLIS DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1981-08-01

Pagination or Media Count:

105.0

Abstract:

Liquid phase epitaxial growth of Ge onto single crystal GaAs substrates has resulted in the growth of pGa-n GaAs semiconductor heterojunctions. The structures have been examined by Auger spectroscopy and their current voltage characteristics are dominated by intra-band tunneling in the low voltage region. A qualitative model for the tunneling process is introduced. Heterojunctions of n ZnO with both p and n Si have been prepared by reactive r.f. sputtering. Both n-n and p-n diodes rectify and the low forward bias characteristics show large ideality factors. The results are interpreted by a model in which macroscopic mobility, controlled by intergranular barriers, is coupled with an interface state dominated band profile. Information is given concerning technical papers and conference presentations which have been partly supported by this contract. Reprints are included of two papers which deal with the evaluation of In1-xGaxAsyP1-yInP heterostructures. Several electron and hole traps have been identified and the growth, transport properties, defects and heterostructure device performance has been evaluated. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE