A Photoluminescence Study of Defects in GaAs Caused by Film Deposition and Annealing.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH
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Photoluminescence PL is used to investigate changes induced in the surface layer of a Gallium Arsenide GaAs substrate by sputter-deposition and subsequent annealing. Since PL is both sensitive and non-destructive, it provides a powerful research tool for investigating optically active defects and impurities at near band gap energies. Emission spectra of GaAs substrates encapsulated with thin films of silicon nitride Si3N4 by the technique of neutralized ion beam sputter-deposition reveal no optically active defects at near band gap energies. Annealing substrates encapsulated with Si3N4 adds an emission to the PL spectrum. This emission is attributed to a Gallium vacancy Vga-Silicon acceptor complex. This same complex may also be generated during annealing of bare GaAs substrates doped with Silicon Si. This complex acts to compensate a n-type surface layer on the substrate and, in general, degrades its qualities. Author
- Radiation and Nuclear Chemistry
- Atomic and Molecular Physics and Spectroscopy