Accession Number:

ADA106136

Title:

The On-State of Single-Crystal and Polycrystalline NbO2

Descriptive Note:

Journal article

Corporate Author:

RUTGERS - THE STATE UNIV NEW BRUNSWICK NJ DEPT OF ELECTRICAL ENGINEERING

Report Date:

1981-02-01

Pagination or Media Count:

8.0

Abstract:

Single-crystal and polycrystalline NbO2 switching devices were studied by double pulse and pulse interruption techniques. Results for single-crystal devices indicated a recovery time of 0.8-1.2 microseconds that is independent of the polarity relationship of the first and second switching pulses. Voltage interruptions, obtained by pulses of variable duration in opposition to the on-voltage, provided excursions into the on-state and revealed plateau regions in device voltage versus time. Hence the opposition or diagnostic pulse provides a region of rapidly decreasing on-state voltage followed by a region of zero on-voltage, from which current-voltage I-V data can be measured. An I-V curve of the on-state, thus obtained, showed a transitional region from an Ohmic state to a lower conductance subregime of on-state. Below the holding voltage the time required to develop this lower-conductance subregime is about 50 ns for a single-crystal device, agreeing favorably with results from cw studies. The related time interval for polycrystalline devices is 250-350 ns. The interval between the holding voltage and the beginning of the transitional regime 10-20 ns is interpreted to be the trapped carrier lifetime or emission time.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE