High Dose Rate Electron Beam Testing.
Final rept. 1 Mar-30 Sep 80,
MISSION RESEARCH CORP LA JOLLA CA
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A test program was designed to investigate test methods utilized for high dose rate e-beam testing of semiconductor components. Several methods used to vary the exposure dose were investigated including the variation of drift chamber pressure and length as well as beam aperturing. The photo response obtained for a 1N916 diode at the HIFX and Hermes facilities were in agreement for the various modes of apparation. In addition, it was found that acceptable dose measurements can be performed at the high intensities if the dosimeters are placed in close proximity to the device under test. Author
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics