Piezo-Optical Determinations of Deformation Potentials Relevant to Transport Properties Calculations of Multivalley Semiconductors.
BELFER GRADUATE SCHOOL OF SCIENCE NEW YORK MAXWELL R MAYBAUM INST FOR MATERIA L SCIENCES/QUANTUM ELECTRONICS
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An investigation of the stress-dependence of the indirect absorption edge in semiconductors such as Si can yield information concerning the relative contributions of the phonon-assisted electron and hole scattering mechanisms to the absorption mechanism. Once the relative coefficients are known a fit to the absorption coefficient can be made in order to determine the absolute values for electron-phonon and hole-phonon deformation potentials. It has been demonstrated that in the case of Si these two processes are affected differently by the applied stress and hence it is possible to separate them. Utilizing the sensitive technique of wave-length modulated transmission we have undertaken an investigation of the stress-dependent intensities of the indirect transition in Si. Author
- Solid State Physics