Accession Number:

ADA102252

Title:

High-Speed GaAs MESFET Memory Study.

Descriptive Note:

Final rept. 12 Jun 79-11 Sep 80,

Corporate Author:

HUGHES RESEARCH LABS MALIBU CA

Personal Author(s):

Report Date:

1981-07-01

Pagination or Media Count:

63.0

Abstract:

A design and analysis study of potential high-speed GaAs-MESFET memory circuits was performed. The results show that a 1-kbit static RAM having a 1-nsec access time is feasible. The design of the flip-flop memory cell uses low-power enhancement-mode MESFETs power dissipation would be 5 microwatts per cell. To achieve maximum memory speed, the peripheral control and drive circuitry uses depletion-mode devices total power dissipation would be about 1 W. Experimental testing and characterization of the memory circuit designs will be performed during the second phase of the program. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE