Accession Number:

ADA102123

Title:

Radiation-Hardened N(+) Gate CMOS/SOS.

Descriptive Note:

Final rept. 30 Sep 78-31 May 81,

Corporate Author:

RCA LABS PRINCETON NJ

Report Date:

1981-05-01

Pagination or Media Count:

65.0

Abstract:

Process development work for a hardened N polysilicon-gate CMOSSOS process has demonstrated that it is possible to make functional 4K CMOSSOS static RAMs that are hard to 5 x 10 to the 5th power rads without the implementation of special hardened circuit design techniques. Present circuit probe yields are low, limited by the lack of a hardened low-temperature contoured field oxide. Independent research has shown that a hardened reflow process is possible for such field oxides. Development of this reflow process is nearly complete and should result in significant improvement in yields when fully integrated into the rad-hard N process. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Computer Hardware
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE