Electron Device Contact Studies.
Interim rept. 1 Nov 78-31 Oct 79,
OHIO STATE UNIV RESEARCH FOUNDATION COLUMBUS
Pagination or Media Count:
This report describes the initial half of a program of investigation and characterization of contacts made to GaAs. A theoretical model of contact behavior based on electron tunneling is adapted to GaAs and will be used to compare experimental results of Au contacts fabricated on Sn diffused, n-type, GaAs surface layers. The fabrication of n-type layers using spin-on dopant sources and a semiclosed chamber, in an open tube diffusion process are explained. the characterization of contact performance with a value of specific contact resistance, R sub C, and the measurement of R sub C using the transfer length method are covered. Investigation into In-au GaAs alloyed type contacts is also presented. Author
- Solid State Physics