Investigation of Quantum Effects in Heterostructures.
Final rept. 1 Apr 78-31 Mar 81,
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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Semiconductor superlattices made of periodic, ultra-thin layers of In1-xGaxAs and GaSb1-yAsy are grown by molecular beam epitaxy. The epitaxial process is established to provide atomically smooth interfaces and precisely controlled thickness and composition. Quantum states or subbands are created, which have been investigated experimentally and analyzed theoretically. Unique properties of this superlattice system, such as the semiconductor-semimetal transition and the spatial separation of carriers, have been observed. Energy positions and dispersion of the subbands and the existence of multiple subbands have been studied through a variety of physical measurements, primarily, magneto-oscillations and absorptions. The effect of the superlattice potential on the band structure at different points in the momentum space has also been demonstrated from electroreflectance measurements for both the In1-xGaxAs-GaSb1-yAsy and the GaAs-Ga1-xA1xAs system. Author
- Solid State Physics