Monolithic GaAs Dual-Gate FET Phase Shifter.
Tri-annual rept. no. 2, 1 Jan-30 Apr 81,
RCA LABS PRINCETON NJ
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Progress is reported. 1 The photomask of a 0 to 90 deg monolithic GaAs dual-gate FET phase shifter was designed and ordered from Photronics Labs, Inc. in Connecticut. The estimated delivery date is late June 1981. 2 A technique for fabricating via holes using laser drilling was developed. This technique can drill a 1-mil-diameter via hole through a 4-mil-thick GaAs substrate without much undercut and without an infrared microscope for backside alignment. 3 A four-way, in-phase combiner on Al2O3 substrate has been developed with good performance. The same design is being modified for fabrication on GaAs semi-insulating substrates. This four-way, in-phase combiner is needed for the 0 to 360 deg phase shifter that will be developed in the next phase. Author
- Electrical and Electronic Equipment
- Solid State Physics