Accession Number:

ADA101581

Title:

Bipolar Transistor and Diode Failure to Electrical Transients--Predictive Failure Modeling versus Experimental Damage Testing. 2. AFWL Transistor and Diode Failure Model.

Descriptive Note:

Technical memo.,

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Personal Author(s):

Report Date:

1981-06-01

Pagination or Media Count:

32.0

Abstract:

An investigation of the predictive capability of a new Air Force Weapons Laboratory model for transistor and diode failure under reverse bias was initiated. A comparison with the junction capacitance damage model shows a doubled improvement at high confidence levels based on an Army-generated population of experimental damage data. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE