Bipolar Transistor and Diode Failure to Electrical Transients--Predictive Failure Modeling versus Experimental Damage Testing. 2. AFWL Transistor and Diode Failure Model.
HARRY DIAMOND LABS ADELPHI MD
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An investigation of the predictive capability of a new Air Force Weapons Laboratory model for transistor and diode failure under reverse bias was initiated. A comparison with the junction capacitance damage model shows a doubled improvement at high confidence levels based on an Army-generated population of experimental damage data. Author
- Electrical and Electronic Equipment