Accession Number:

ADA101167

Title:

Investigation of Surface-Scattering Losses of III-V Compound Semiconductors.

Descriptive Note:

Interim technical rept. 28 Sep 79-27 Mar 81,

Corporate Author:

RUTGERS - THE STATE UNIV NEW BRUNSWICK N J DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1981-06-10

Pagination or Media Count:

15.0

Abstract:

Stages 1 and 2 of the proposed program were completed during the first 18 months of this effort. A satellite chamber for device fabrication was designed, built and incorporated into the main high vacuum chamber. The free surface properties of GaAs 110 and GaP 110 were studied using LEED and AES. Reports on this work were presented at scientific meetings. The problem of a wave propagating with losses in a rectangular waveguide was formulated and solved. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE