Accession Number:

ADA101126

Title:

Semiconductor Oxide Interface States.

Descriptive Note:

Final rept. 15 Sep 78-28 Feb 81,

Corporate Author:

ILLINOIS UNIV AT URBANA-CHAMPAIGN SOLID STATE ELECTRONICS LAB

Personal Author(s):

Report Date:

1981-05-01

Pagination or Media Count:

38.0

Abstract:

This final report gives a summary of the experimental and theoretical studies undertaken during the two-year AFOSR grant on the electrical properties and atomic origins of oxide charges and interface states in the silicon oxide-silicon MOS structure. Both UV light and KeV electron are used to probe these interface and oxide states. MOS C-V, G-V and photo I-V measurements are performed under computer control. Experiments have shown that trivalent silicon and nonbridging oxygen are likely to be the principal atomic defects that are responsible for the presence of the interface states and oxide charges. Hydroxyl or hydrogen ions can tie up these dangling bonds and neutralize these atomic defects but bonded H and OH can be readily released by the electrons or holes generated by the 10.2 eV photons or KeV electrons. After the defects are generated, they can be neutralized readily by exposing the MOS capacitor to forming gas 4 H2 and 96 N2 at 390 C for 10 minutes. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE