Development of Long Wavelength Single Longitudinal (SLM) Injection Laser Diodes.
Final technical rept. Nov 79-Dec 80,
LASER DIODE LABS INC NEW BRUNSWICK NJ
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Development of Long Wavelength Single Longitudinal SLM Injection Laser Diodes emitting in the 1.3 micron region, utilizing a buried heterojunction BH structure. This final report describes efforts directed toward the development and optimization of these type devices and, in particular, concentrates on the following points 1 Optimization of the double heterojunction DH structure 2 Process development connected with the fabrication of buried heterojunction BH laser structures 3 Modification BH laser structure and fabrication technique to optimize severe melt back 4 Modification of the regrowth LPE technique to resolve melt back and the optimization of the N-P reverse bias junctions and 5 Device performance. Author
- Lasers and Masers
- Solid State Physics