Accession Number:

ADA101068

Title:

Development of Long Wavelength Single Longitudinal (SLM) Injection Laser Diodes.

Descriptive Note:

Final technical rept. Nov 79-Dec 80,

Corporate Author:

LASER DIODE LABS INC NEW BRUNSWICK NJ

Personal Author(s):

Report Date:

1980-12-30

Pagination or Media Count:

65.0

Abstract:

Development of Long Wavelength Single Longitudinal SLM Injection Laser Diodes emitting in the 1.3 micron region, utilizing a buried heterojunction BH structure. This final report describes efforts directed toward the development and optimization of these type devices and, in particular, concentrates on the following points 1 Optimization of the double heterojunction DH structure 2 Process development connected with the fabrication of buried heterojunction BH laser structures 3 Modification BH laser structure and fabrication technique to optimize severe melt back 4 Modification of the regrowth LPE technique to resolve melt back and the optimization of the N-P reverse bias junctions and 5 Device performance. Author

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE