InP by Planar Reactive Deposition and GaAs by Low Pressure Metal Organic Chemical Vapor Deposition.
Final rept. 1 Jun 76-30 Nov 80,
HUGHES RESEARCH LABS MALIBU CA
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The planar reactive deposition PRD technique was developed to grow InP thin films by vacuum evaporation in a H2 reactive atmosphere. InP films with room temperature mobilities as high as 4062 sq cmVsec and carrier concentrations ND-NA as low as 10 to the 16th power cucm were grown on 100 semi-insulating substrates. N films with carrier concentration of a few times 10 to the 19th power cucm were obtained using Sn doping. NNN multilayer structures, and large area 10 cm epitaxial films were grown on InP substrates. Epitaxial films of InGaAs, InGaP and InGaAsP were grown by PRD, and lattice matched to InP and GaAs substrates. As an intermediate step to grow InP by low pressure metal organic chemical vapor deposition LPMOCVD, GaAs was grown by LPMOCVD. Unintentionally doped p-type GaAs, with hole concentration as high as a few times 10 to the 20th power cu cm, was grown at the Ga-rich three-phase boundary. By undertaking growth away from the boundary, the hole concentration decreased, and ionized impurity concentrations NA ND as low as 10 to the 16th power cu cm were obtained. Major background impurities for growth of InP by PRD and GaAs by LPMOCVD are carbon and oxygen. Growth of InP in a halide environment is recommended to obtain higher purity InP thin films by low cost vacuum technologies. Author
- Solid State Physics