Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory.
HARRY DIAMOND LABS ADELPHI MD
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The feasibility of a new kind of nonvolatile digital memory is proposed and examined. The basis of the memory is an anomalous photovoltaic phenomenon found in ferroelectric ceramics--a photovoltage with a polarity that depends on the direction of the remanent polarization. Described are proposed memory cell structures that function in matrix arrangements as nonvolatile readwrite random access memory or electrically alterable programmable read-only memory. Test results obtained with an experimental test unit also are described. Included is a survey of methods for producing ferroelectric films. Author
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