Accession Number:

ADA099272

Title:

Low Resistivity - High Lifetime Single Crystal Silicon Investigation.

Descriptive Note:

Final rept. Aug 77-Dec 80,

Corporate Author:

SPECTROLAB INC SYLMAR CALIF

Personal Author(s):

Report Date:

1981-03-01

Pagination or Media Count:

48.0

Abstract:

Results of recent studies at Spectrolab utilizing improved quality, low resistivity silicon material are presented. Crystal doping methods used include boron ion implantation, diborane gas, and elemental gallium doping. NtP solar cells were fabricated from these materials and then evaluated electrically, both beginning of life and after electron irradiation. Cells made from 0.17 ohm-cm SiGa material yielded the most impressive results, with open circuit voltages of 633 mV at 25C, AMO. This float zone grown material also proved stable under photon irradiation post electron irradiation. Author

Subject Categories:

  • Electric Power Production and Distribution
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE