Accession Number:

ADA099156

Title:

Monolithic Integration of Microwave GaAs Power FETs.

Descriptive Note:

Annual technical rept. 10 Oct 79-30 Nov 80,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS

Personal Author(s):

Report Date:

1981-01-01

Pagination or Media Count:

29.0

Abstract:

Efforts during the third year of this contract have included further performance improvements of the two-stage monolithic push-pull amplifier, successful demonstration of the paraphase amplifier at lower X-band frequencies, testing of the fully integrated push-pull FIPP discrete devices and design and development of a mask set for an x-band dual-gate push-pull power FET device structure. Performance results for the two-stage push-pull amplifier include a saturated cw output power of 1.4 W, a small signal gain of 16 dB with a 1 dB gain compression point of 1.3 W at 9.0 GHz. The paraphase amplifier has demonstrated active balun action from 6.5 to 9.0 GHz. The gain is 3 dB for each antiphase output at 8.0 GHz and tracks within or - 0.75 dB over the 6.5 to 9.0 GHz frequency range. Phase tracking of the 180 deg characteristic is within or - 20 deg. Preliminary results for the 1.2 mm gate width FIPP devices indicate higher small signal gains than for conventional FETs with comparable gate width. Narrow-band small signal gains up to 12 dB have been obtained at 10 GHz. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE