Submicron FETs Using Molecular Beam Epitaxy.
Annual rept. no. 3, Aug 79-Aug 80,
VARIAN ASSOCIATES INC PALO ALTO CA SOLID STATE LAB
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Electron-beam exposure and MBE material have been used to achieve quarter-micron gate length GaAs FETs. A noise figure of 1.2 dB with an associated gain of 13 dB has been measured at 8 GHz. Author
- Particle Accelerators