Accession Number:

ADA097026

Title:

Submicron FETs Using Molecular Beam Epitaxy.

Descriptive Note:

Annual rept. no. 3, Aug 79-Aug 80,

Corporate Author:

VARIAN ASSOCIATES INC PALO ALTO CA SOLID STATE LAB

Report Date:

1981-01-01

Pagination or Media Count:

70.0

Abstract:

Electron-beam exposure and MBE material have been used to achieve quarter-micron gate length GaAs FETs. A noise figure of 1.2 dB with an associated gain of 13 dB has been measured at 8 GHz. Author

Subject Categories:

  • Crystallography
  • Particle Accelerators

Distribution Statement:

APPROVED FOR PUBLIC RELEASE