Carrier Localisation in Inversion Layers and Impurity Bands.
Annual technical rept. Sep 79-Nov 80,
CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
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This report contains results on the ballistic injection of electrons between Al and n Si and Al and the Si inversion layer. This was the first experiment on ballistic injection between a semiconductor and a metal, and yielded results of considerably greater clarity than those found from the all metal work. Basically the phonons responsible for intervalley scattering can be clearly observed and the technique offers a means of identifying the various subbands in the Si inversion layer. Plasmons could be observed and in future it is planned to extend this technique to III-V semiconductors. The other area of research described in this report is a collaborative experiment with Dr. K. von Klitzing and Dr. G. Dorda. It is shown that the Hall resistance of a MOSFET, when the conduction band is quantized by a strong magnetic field, is related simply to the fine structure constant. The experiment is described in detail. Author
- Solid State Physics