Accession Number:

ADA094887

Title:

Carrier Localisation in Inversion Layers and Impurity Bands.

Descriptive Note:

Annual technical rept. Sep 79-Nov 80,

Corporate Author:

CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB

Personal Author(s):

Report Date:

1980-11-01

Pagination or Media Count:

32.0

Abstract:

This report contains results on the ballistic injection of electrons between Al and n Si and Al and the Si inversion layer. This was the first experiment on ballistic injection between a semiconductor and a metal, and yielded results of considerably greater clarity than those found from the all metal work. Basically the phonons responsible for intervalley scattering can be clearly observed and the technique offers a means of identifying the various subbands in the Si inversion layer. Plasmons could be observed and in future it is planned to extend this technique to III-V semiconductors. The other area of research described in this report is a collaborative experiment with Dr. K. von Klitzing and Dr. G. Dorda. It is shown that the Hall resistance of a MOSFET, when the conduction band is quantized by a strong magnetic field, is related simply to the fine structure constant. The experiment is described in detail. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE