Incoherent and Laser Photodeposition on Thin Films.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
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High purity Zn, Se, and ZnSe thin films approximately 100 to 6000A thicknesses have been deposited on both quartz and sapphire substrates by using a Hg arc lamp u-v light source to photodissociate the organometallic molecules ZnCH32 and SeCH32. Large area depositions approximately 1.5 cm diameter circles have been produced, along with masked depositions created by selectively blocking the incoherent light source. Absorption measurements of these organometallic vapors from 0.2 to 20 microns indicates the possibility of producing ultra-high purity thin films by using simultaneously both a CO 5.6 - 5.9 micron and a CO2 10.6 micron laser in conjunction with a pulsed KrF 2480A in a highly selective two step photodissociation process. Such results offer the potential for a drastically new and greatly improved quality film plus an extremely well controlled alternative to the more conventional thin film deposition techniques such as thermal vacuum deposition, sputtering, and chemical vapor deposition. Author
- Radiation and Nuclear Chemistry
- Lasers and Masers
- Coatings, Colorants and Finishes