Mercury Cadmium Telluride Sputtering Research.
Annual technical rept.,
NEW JERSEY INST OF TECH NEWARK
Pagination or Media Count:
Improved as-deposited mobility values for rf triode-sputtered thin films of HG,CdTe, with 25 mole percent CdTe, were obtained by increasing the Hg vapor pressure and the temperature of the single crystal CdTe and Si substrates. Films on single crystal 111 oriented CdTe substrates had the highest as-deposited electron mobility, as determined by four-point probe Hall-effect measurements values of 2200 and 3720 cm squared per volt sec. with carrier concentrations of 5 and 2.8 times ten to the sixteenth per inverse cubic cm we obtained as 296 and 89 degree Kelvin respectively. Using unoptimized procedures, it was shown that the n-type mobility could be appreciably increased. Films with complete 111 crystal orientation and composition of bulk crystals with the same mole percent of CdTe x value as that for the pressed-powder targets made from a mixture of HgTe and CdTe powders were obtained for x values of 0.1, 0.18, 0.23, and 1.0. ESCA revealed that films with a mixture of 311 and 111 crystal orientations and submicron grain size were deficient in Hg. A nonlinear IV characteristic was measured for a sputtered heterojunction structure. Author