Indium Phosphide for High Frequency Power Transistors
Final rept. 22 Mar 1979-28 Apr 1980
WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
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This report covers the conclusion of studies aimed at determining the utility of InP for fabricating power microwave field effect transistors FETs. This phase of the work provided working transistors which were modeled and compared to their GaAs counterparts. Vapor phase epitaxy VPE results are provided for device structures which include high resistivity buffer layers. Ion implantation was aimed at a novel amorphization and low temperature regrowth study to provide implanted p-n junctions in InP for future JFET structures. Processing technology concentrated on a self-aligned diffused gate JFET structure. This technique produced working microwave transistors JFET up to 1200 micrometer in gate periphery. The report compares these devices to similar GaAs transistors MESFET and makes recommendations for future studies.
- Physical Chemistry
- Solid State Physics