Accession Number:

ADA094412

Title:

Capless Annealing of Ion Implanted GaA.

Descriptive Note:

Final rept. 1 Sep 78-31 Aug 80,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER

Personal Author(s):

Report Date:

1980-12-01

Pagination or Media Count:

56.0

Abstract:

A capless powder annealing technique PAT is described and is shown to enable reproducible annealing of ion implanted GaAs without the need of a protective cap. This method employs finely powdered graphite as the annealing medium with a layer of finely crushed GaAs beneath it proving an As-rich environment which prevents the GaAs substrate from decomposing at typical annealing temperatures of 850 C. Using rf spark-source mass spectrometry, an As concentration in excess of the equilibrium value of As over GaAs at the annealing temperature is found in the post-process powder. The crushed GaAs layer is essential in providing this high As concentration.

Subject Categories:

  • Fabrication Metallurgy
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE