Capless Annealing of Ion Implanted GaA.
Final rept. 1 Sep 78-31 Aug 80,
ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER
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A capless powder annealing technique PAT is described and is shown to enable reproducible annealing of ion implanted GaAs without the need of a protective cap. This method employs finely powdered graphite as the annealing medium with a layer of finely crushed GaAs beneath it proving an As-rich environment which prevents the GaAs substrate from decomposing at typical annealing temperatures of 850 C. Using rf spark-source mass spectrometry, an As concentration in excess of the equilibrium value of As over GaAs at the annealing temperature is found in the post-process powder. The crushed GaAs layer is essential in providing this high As concentration.
- Fabrication Metallurgy
- Atomic and Molecular Physics and Spectroscopy