Photoluminescence Study of Thermal Conversion in Gallium Arsenide.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
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A photoluminescence study was made of undoped and chromium-doped gallium arsenide annealed in three different atmospheres argon, hydrogen, and nitrogen. The purpose of this study was to determine the causes of thermal conversion and to examine the effects of different annealing atmospheres on this problem. It was found that conversion can be due to any of the a number of causes, rather than to one common cause. Conversion in the samples studied was associated with carbon impurities in undoped samples and with silicon in doped samples. Although manganese was found to be present in many samples, no clear association of manganese with type conversion was found. It was found that annealing under nitrogen gas was the most effective way of maintaining a semi-insulating surface layer. Author
- Physical Chemistry