Multipulse Laser Annealing of Selenium Implanted GaAs.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
Pagination or Media Count:
GaAs implanted with 120 keV Se at a fluence of 10 to the 14th power ionssq cm was laser annealed using .53 micrometers energy from a Q-switched, frequency doubled, NeodymiumYAG laser. The substrates were irradiated in air by either a single pulse or multipulse with an average energy density of 300 mjsq cm per pulse. The pulse width FWHM was 15 ns. Optical reflectivity in the ultraviolet spectrum of 210 nm to 380 nm was used to evaluate the crystal-line structure. The relative crystalline damage versus depth profile was obtained and compared to that of an as-implanted sample. The depth profiling was accomplished using a chemical etch. Implanted samples annealed at 1, 2, 4, 8, and 12 pulses all showed a dramatic reduction of damage as compared to the as-implanted sample. However, the results of the two pulse anneal show the highest degree of recrystallization approaching that of a virgin sample. Author
- Lasers and Masers
- Fabrication Metallurgy