Accession Number:

ADA094277

Title:

InGaAsP Quaternary Materials for Near Infrared Detector and Laser Applications

Descriptive Note:

Final rept. 1 Jan 1977-29 Feb 1980

Corporate Author:

ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1980-06-01

Pagination or Media Count:

64.0

Abstract:

In this project we have been concerned with the liquid phase epitaxial LPE and vapor phase epitaxial VPE growth of this quaternary system. A number of the basic features of the LPE growth of InGaPAs on InP have been identified. InP-In sub 1-x Ga sub x P sub 1-2 As sub z heterostructure lasers and detectors have been constructed and have been studied.

Subject Categories:

  • Lasers and Masers
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE