InGaAsP Quaternary Materials for Near Infrared Detector and Laser Applications
Final rept. 1 Jan 1977-29 Feb 1980
ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL ENGINEERING
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In this project we have been concerned with the liquid phase epitaxial LPE and vapor phase epitaxial VPE growth of this quaternary system. A number of the basic features of the LPE growth of InGaPAs on InP have been identified. InP-In sub 1-x Ga sub x P sub 1-2 As sub z heterostructure lasers and detectors have been constructed and have been studied.
- Lasers and Masers
- Infrared Detection and Detectors