Accession Number:

ADA094263

Title:

Monolithic GaAs Superheterodyne Front End.

Descriptive Note:

Progress rept. no. 1, 15 Aug 78-14 Aug 79,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER

Report Date:

1980-05-01

Pagination or Media Count:

44.0

Abstract:

This report describes the progress during the first phase of the development of a monolithic Gallium Arsenide Superheterodyne Front End for the 8GHz military satellite communications band. The integrated GaAs receiver chip is to be fabricated using the monolithic microwave integrated circuit MMIC approach. It will contain an RF preamplifier, an FET mixer, and an IF amplifier. A monolithic GaAs local oscillator will be developed under a separate program. This report describes the design and the fabrication of the three circuits to be integrated. Functional monolithic circuits have been fabricated and are being characterized at present. The IF amplifier has shown 8.0 or - 1.5 db gain and 6.35 db maximum noise figure in the 500 - 1000 MHz frequency band. RF performance of the preamplifier and the mixer will be described in the next report. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE