Comparison of Site-Specific Densities of States of Ga and As in Cleaved and Sputtered GaAs(110) by Means of Auger Line Shapes.
WISCONSIN UNIV-MADISON MATERIALS SCIENCE CENTER
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Site-specific densities of states for the Ga and As sites in GaAs 110 are derived from the M1M45V Auger lines and compared for the cleaved and sputtered surfaces. X-ray photoelectron spectroscopy, scanning electron microscopy, and LEED results for these surfaces are also presented. The results are interpreted in terms of a structure for the sputtered surface that consists of a two-phase mixture of Ga and disordered GaAs. Author
- Atomic and Molecular Physics and Spectroscopy