Accession Number:

ADA094244

Title:

Comparison of Site-Specific Densities of States of Ga and As in Cleaved and Sputtered GaAs(110) by Means of Auger Line Shapes.

Descriptive Note:

Technical rept.,

Corporate Author:

WISCONSIN UNIV-MADISON MATERIALS SCIENCE CENTER

Personal Author(s):

Report Date:

1980-11-30

Pagination or Media Count:

28.0

Abstract:

Site-specific densities of states for the Ga and As sites in GaAs 110 are derived from the M1M45V Auger lines and compared for the cleaved and sputtered surfaces. X-ray photoelectron spectroscopy, scanning electron microscopy, and LEED results for these surfaces are also presented. The results are interpreted in terms of a structure for the sputtered surface that consists of a two-phase mixture of Ga and disordered GaAs. Author

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE