Investigation of CNTD Mechanism and its Effect on Microstructural Properties.
Final rept. 20 Sep 78-20 Sep 79,
SAN FERNANDO LABS PACOIMA CALIF
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This report presents results of a research program in which we sought to develop a chemical vapor deposition CVD method for the deposition of extremely fine grained silicon nitride. The program consisted of three separate technical efforts. The first effort, a parametric study of the conventional silicon tetrahalide-ammonia CVD chemistry, produced no significant grain refinement in the Si3N4 deposits. The second effort attempted, with no success, to utilize silicon halide disproportionation chemistry in the CVD process. Finally, we observed an apparently successful Si3N4 grain refinement during the third effort in which we used the competing codeposition of separate phases to interrupt grain growth. During this effort, we tried the codeposition of silicon nitride and silicon carbide with no success. However, we found apparently good results when silicon nitride was codeposited with aluminum nitride. Author
- Physical Chemistry
- Manufacturing and Industrial Engineering and Control of Production Systems