Investigation of Charge Coupled Devices for Signal Processing.
Final technical rept. 15 Apr 77-1 Jun 80,
ILLINOIS UNIV AT URBANA-CHAMPAIGN DEPT OF ELECTRICAL ENGINEERING
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This report describes a noise correlation processor for automatic low frequency noise power spectra measurements, theoretical analysis of hot electron effects and trapping noise in silicon charge coupled devices, small-signal equivalent circuit measurement of SiO2-Si interface states, the voltage stimulated capacitance transient spectroscopy VSCTS or DLTS of silicon bulk deep levels due to impurities and ion implantation damage for buried channel CCD, spurious DLTS surface signal, and CCD performance limitations by interband impact ionization effects due to high electric field in the gap and under the gate of CCD. Author
- Electrical and Electronic Equipment