Preparation and Properties of Al(x)Ga(1-4)As:Cr Single Crystals.
Final rept. 1 Oct 77-31 Aug 80,
STANFORD UNIV CALIF STANFORD ELECTRONICS LABS
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This research program is divided into the following four related topics 1 Growth of AlxGa1-4AsCr thin semi-insulating SI layers by liquid phase epitaxial LPE techniques, 2 Properties of Cr deep levels in AlxGa1-4AsCr single crystals 3 Investigation of the interface properties of SIAlxGal-xAsCr-nGaAs heterojunctions and 4 Construction and properties of Au-SIAlxGa1-4AsCr-nGaAs-SIGaAsCr MIS field effect transistor structures. Methods have been developed for reproducibly growing high quality Cr doped single crystal layers having selected values of x between 0.0 and 0.9 with specified thicknesses between 300 A and several micrometers. The results were analyzed to determine the current-transport mechanisms as well as to obtain information on the localized states and electron potential at the SIAlGaAs-GaAs interface. Two different insulated gate field-effect transistor structures were designed which consist of 1 a self aligned p-channel device formed by Zn diffusion and 2 an n-channel transistor formed by e-beam lithography and sulfur ion implants. Electrical measurements on the former established that a p-channel was formed and quantitative values of its properties were obtained. The latter is still under development.
- Fabrication Metallurgy
- Solid State Physics