Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices
Interim rept. 1 Oct 1979-30 Mar 1980
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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This report covers the high current injection into SiO2 using Si rich SiO2, the use of Raman scattering to observe amorphous Si in Si rich SiO2 and the crystallization of this amorphous Si at high temperatures, the use of attenuated total reflectance measurements to study Si rich SiO2, measurements of physical characteristics of oxides grown using high pressure oxidation, and the description of an automatic tester developed for use in electron and hole trapping studies.
- Solid State Physics