Accession Number:

ADA093506

Title:

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Descriptive Note:

Interim rept. 1 Oct 1979-30 Mar 1980

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Report Date:

1980-11-01

Pagination or Media Count:

140.0

Abstract:

This report covers the high current injection into SiO2 using Si rich SiO2, the use of Raman scattering to observe amorphous Si in Si rich SiO2 and the crystallization of this amorphous Si at high temperatures, the use of attenuated total reflectance measurements to study Si rich SiO2, measurements of physical characteristics of oxides grown using high pressure oxidation, and the description of an automatic tester developed for use in electron and hole trapping studies.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE