Accession Number:

ADA093492

Title:

Electromigration Testing of Al-Alloy Films.

Descriptive Note:

Final technical rept. 25 Sep 78-30 Jun 80,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR GROUP

Personal Author(s):

Report Date:

1980-10-01

Pagination or Media Count:

85.0

Abstract:

A search for reliability improvement of Al film interconnections has led to the introduction of Al-Alloy films such as AlCu, AlCuSi and so on. This report describes the results of an in-depth study of Al, AlCu 2 wt Cu and AlCuSi 2 wt Cu 1 Si film interconnections and SiliconAl-Alloy film contacts as they impact reliability of integrated circuits. Resistivity, microstructure and composition of Al-Alloy films vacuum deposited from an induction heated source IN-Source and dc magnetron sputter deposition techniques have been investigated and it is concluded that IN-Source and dc magnetron sputter deposition tecniques are equally capable of producing Al, AlCu 2 wt and AlCuSi 2 wt Cu 1 Si films of comparable compositions, resistivity and microstructure. Chemical Analysis X-Ray Fluorescence Electron Microprobe, Scanning and Transmission Electron Microscopy and Ion Microprobe have been employed for Al-Alloy film characterization. Availability of automated dc magnetron sputter M-S deposition equipment was a primary factor in the selection of magnetron sputter deposited Al-Alloy films for electromigration testing. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE