The Interaction of Silicon with a Pd (100) Surface.
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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The interaction of silicon with a clean Pd100 surface was studied in UHV using LEED, AES and UV-photoemission. Deposition around 75 C leads to disordered Si layers with little evidence of bluk diffusion or compound formation. Slight warming to about 150 C causes the immediate development of a complex LEED pattern indicative of long-range ordering. A pronouced splitting of the Si LVV Auger line as well as the appearance of a photoemission level about 2.5 eV below Ef is attributed to the formation of palladium II silicide, Pd2Si. Annealing at 250-500 C leads to decomposition of this silicdie as indicated by the destruction of the complex LEED pattern and the disappearance of the Pd2Si Auger lines. Above 600 C diffusion of silicon into the bulk predominates which leads to a rapid depletion of silicon on the Pd surface as can be followed from both AES and UPS.
- Inorganic Chemistry