Accession Number:

ADA093217

Title:

Nuclear Transmutation Doping of GaAs

Descriptive Note:

Final rept. 1 Jun 1976-30 Jun 1979

Corporate Author:

CHICAGO UNIV IL JAMES FRANCK INST

Personal Author(s):

Report Date:

1980-10-01

Pagination or Media Count:

19.0

Abstract:

Superior GaAs material is in great demand for high frequency and high speed GaAs devices such as Impatt diodes, Gunn diodes, field effect transistors, and avalanche photodiodes. The quality and control of impurities in GaAs material is much less advanced than in elemental semiconductors such as Si. This is partly because substitutional dopants can occupy either Ga sites or As sites and they tend to associate and cluster. We intend to develop a new method for preparing homogeneous and well controlled GaAs material. This method is nuclear transmutation doping. It has yielded superior Si and Ge semiconductor device material and should be even more successful in the case of GaAs because of the larger neutron capture cross sections and shorter radioactive decay times involved. We intend to study the doping characteristics of bulk and epitaxial layers of GaAs using nuclear transmutation doping and the resulting electrical characteristics.

Subject Categories:

  • Crystallography
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE