Accession Number:

ADA093103

Title:

High-Energy Ion Implantation for Multigigabit-Rate GaAs Integrated Circuit.

Descriptive Note:

Annual rept. 15 May 79-30 Jun 80,

Corporate Author:

RCA LABS PRINCETON NJ

Personal Author(s):

Report Date:

1980-10-01

Pagination or Media Count:

66.0

Abstract:

The objectives of this program are 1 study of high-energy ion implantation of donors into GaAs for multigigabit-rate GaAs integrated-circuit development and 2 annealing of implanted GaAs using high-power lasers to remove lattice damage and activate implanted donors. We have 1 investigated implantation of Si28 into semi-insulating GaAs with implant energies ranging from 40 keV to 1.2 MeV 2 developed a capless thermal annealing process under arsenic overpressure which results in high activation efficiency with excellent surface morphology 3 investigated laser-annealing of Si-implanted GaAs using a high-power NdGlass laser and a ruby laser. Electrical activation of high-dose, low-energy 300 keV implanted samples is many times higher in laser-annealed samples than for those thermally annealed 4 demonstrated nonalloyed ohmic contacts formed by direct evaporation of AuGe onto high-dose implanted laser-irradiated GaAs surface and 5 studied impurity distribution in as-implanted, thermally annealed, and laser-annealed samples by secondary ion mass spectrometry. The amount of impurity redistribution depends on the energy and the dose of implantation and on the energy density of the annealing laser pulse. Investigations were continued in 1 si-implantation and capless annealing 2 laser and electron beam annealing and 3 chromium redistribution in implanted and annealed GaAs.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE