Accession Number:

ADA091310

Title:

The Mobility, Resistivity and Carrier Density in p-Type Silicon Doped with Boron, Gallium and Indium.

Descriptive Note:

Doctoral thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH

Personal Author(s):

Report Date:

1979-08-01

Pagination or Media Count:

172.0

Abstract:

The goal of this study has been to measure and compare with theory the resistivity and Hall mobility of holes in silicon doped with gallium and indium as functions of temperature and dopant density. Data taken on boron-doped silicon was also included in order to further confirm the adequacy of the theoretical model. In order to determine theoretically the resistivity and Hall mobility, one must first calculate the conductivity mobility, the density of holes, and the Hall factor. This can only be done with a thorough understanding of the energy band structure, the scattering mechanisms involved, and the carrier statistics. The application of an electric or a magnetic field to a crystal results in a variety of carrier transport phenomena. These phenomena are associated with the motion of current carriers in the conduction or valence bands. The free charge carrier in a semiconductor will acquire a drift velocity under the influence of an applied electric field. This velocity is the net result of the momentum gained from the externally applied field, and the momentum lost in collisions which tend to randomize the carrier momentum.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE