GaAs Surface Passivation for Device Applications.
Interim rept. no. 3, 3 Dec 79-31 Mar 80,
ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER
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Three samples of MBE grown graded Al1-xGaxAs epitaxial layers on GaAs have been prepared. The initial oxidation procedure used on these samples produced only a superficial oxide layer as determined by SAM analysis. C-V and G-V results have been obtained for the initial oxidized specimens and for a specimen of sample 411 which was given a subsequent additional oxidation treatment. During the next reporting period a systematic C-V study as a function of oxidation conditions will be carried out. An initial attempt to deposite an aluminum oxide layer by evaporating Al in an oxidizing atmosphere was unsuccessful which suggests that a much more oxidizing ambient perhaps a plasma discharge needs to be utilized if this approach is to be pursued. Author
- Atomic and Molecular Physics and Spectroscopy
- Solid State Physics