Accession Number:

ADA090604

Title:

Adsorption of Oxygen on the (110) Plane of Tungsten at Low Temperatures.

Descriptive Note:

Technical rept.,

Corporate Author:

CHICAGO UNIV IL JAMES FRANCK INST

Personal Author(s):

• Michel,H.
• Opila,R.
• Gomer,R.

Report Date:

1980-10-06

Pagination or Media Count:

25.0

Abstract:

Isotope labelling experiments have established that the adsorption of O2 on the W110 plane at 20 K leads first to the formation of a dissociated atomic layer. A weakly bound molecular species, alpha-O2, forms only when the atomic layer is essentially complete OW 0.6. The desorption of alpha-O2 was found to be first order with an activation energy of E 1.9 Kcalmole and a frequency factor gamma 3 x 10 to the 9th power. The activation energy is shown to be less than the enthalpy of desorption and the meaning of this result is discussed. Author

Descriptors:

• *OXYGEN
• *SURFACE CHEMISTRY
• *TUNGSTEN
• LOW TEMPERATURE
• VIBRATION
• CRYSTAL STRUCTURE
• ADSORPTION
• PRECURSORS
• RESISTANCE
• EXCITATION
• VOLTAGE
• HEATING
• ISOTOPES
• DESORPTION
• ATOMIC PROPERTIES
• ENTHALPY
• MOLECULAR PROPERTIES
• SPECTROMETERS
• LABELED SUBSTANCES
• CHEMISORPTION
• ACTIVATION ENERGY

Subject Categories:

• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE