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Adsorption of Oxygen on the (110) Plane of Tungsten at Low Temperatures.
CHICAGO UNIV IL JAMES FRANCK INST
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Isotope labelling experiments have established that the adsorption of O2 on the W110 plane at 20 K leads first to the formation of a dissociated atomic layer. A weakly bound molecular species, alpha-O2, forms only when the atomic layer is essentially complete OW 0.6. The desorption of alpha-O2 was found to be first order with an activation energy of E 1.9 Kcalmole and a frequency factor gamma 3 x 10 to the 9th power. The activation energy is shown to be less than the enthalpy of desorption and the meaning of this result is discussed. Author
APPROVED FOR PUBLIC RELEASE