Accession Number:

ADA090512

Title:

Passivation of GaAs Surfaces.

Descriptive Note:

Final rept. 1 Jan-30 Jun 80,

Corporate Author:

RCA LABS PRINCETON NJ

Personal Author(s):

• Pankove,J. I.

Report Date:

1980-08-15

Pagination or Media Count:

22.0

Abstract:

Various approaches to passivating the surface of GaAs have been explored. All of these were aimed at tying dangling bonds with atoms bonding more tightly than either Ga or As. Atomic species of hydrogen and nitrogen were generated by a glow discharge in H2, NH3, or N2. Nitridization with ammonia appears most promising. The degree of passivation was monitored by photoluminescence. A fourfold improvement in luminescence efficiency was obtained with nitridization while a factor-of-ten improvement can be obtained with the less practical technique of generating an AlGaAs skin. Author

Descriptors:

• *GALLIUM ARSENIDES
• *SURFACES
• *PASSIVITY
• ALUMINUM COMPOUNDS
• PHOTOLUMINESCENCE
• FILMS
• ATOMS
• NITROGEN
• AMMONIA
• HYDROGEN
• CHEMICAL BONDS
• GLOW DISCHARGES
• LUMINESCENCE

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE