Accession Number:

ADA090437

Title:

Semi-Insulating Gallium Arsenide for Millimeter Wave and High Speed IC Device Applications,

Descriptive Note:

Corporate Author:

ARMY ELECTRONICS TECHNOLOGY AND DEVICES LAB FORT MONMOUTH N J

Personal Author(s):

• Ross,Raymond L.
• Aucoin,Thomas R.
• Savage,Robert O.
• Winter,John J.
• Malik,Roger J.

Report Date:

1980-06-01

Pagination or Media Count:

14.0

Abstract:

A wide variety of semiconductor devices utilizing gallium, Arsenide GaAs is currently under development by the military for use in advanced communication, surveillance, and target acquisition systems. The low-field electron mobility of GaAs is one of its greatest attributes and offers high frequency operation in devices such as the field effect transistor FET. Coupled with the materials high peak velocity and low threshold field, GaAs integrated circuit IC devices offer a two to six time speed improvement over their silicon counterparts. When compared with standard silicon IC technology, the process steps for GaAs ICs are relatively simple and few in number. As a result of these advantages, the technology of manufacturing high performance GaAs devices is maturing at a rapid rate.

Descriptors:

• *GALLIUM ARSENIDES
• *FIELD EFFECT TRANSISTORS
• HIGH FREQUENCY
• DETECTORS
• INSULATION
• HIGH VELOCITY
• INTEGRATED CIRCUITS
• MILLIMETER WAVES
• SILICON
• STANDARDS
• LOGIC CIRCUITS
• POWER AMPLIFIERS
• MIXERS(ELECTRONICS)

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE