Accession Number:

ADA090302

Title:

Cathodoluminescence Characterization of Ion Implanted GaAs.

Descriptive Note:

Doctoral thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

• Cone,Milton L.

Report Date:

1980-03-01

Pagination or Media Count:

135.0

Abstract:

The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics LaboratoryAADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials. Author

Descriptors:

• *GALLIUM ARSENIDES
• *SEMICONDUCTORS
• *ION IMPLANTATION
• *CATHODOLUMINESCENCE
• SIMULATION
• ELECTRONICS
• COMPUTATIONS
• PRODUCTION
• NONDESTRUCTIVE TESTING
• PROCESSING
• INTENSITY
• THESES
• FABRICATION
• INTEGRATED CIRCUITS
• MONTE CARLO METHOD
• PENETRATION
• PROFILES
• DOSAGE

Subject Categories:

• Physical Chemistry
• Electrical and Electronic Equipment
• Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE