Accession Number:

ADA089704

Title:

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Descriptive Note:

Interim rept. 1 Apr-30 Sep 1979

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Report Date:

1980-05-01

Pagination or Media Count:

208.0

Abstract:

This work includes a study of the morphology associated with the oxidation of polycrystalline silicon, a description of moderate field charge injectors using silicon rich SiO2, a technique for studying trapping characteristics using these charge injectors and a review paper on radiation damage in SiO2.or

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE