Accession Number:

ADA089456

Title:

Growth and Characterization of In(1-x)Ga(x)As(y)P(1-y) and GaAs Using Molecular Beam Epitaxy.

Descriptive Note:

Annual rept. 9 Feb 79-7 Feb 80

Corporate Author:

GEORGIA INST OF TECH ATLANTA ENGINEERING EXPERIMENT STATION

Report Date:

1980-03-01

Pagination or Media Count:

129.0

Abstract:

This report describes the technical work accomplished during the first year of a two-year study of binary and quaternary semiconductors grown by molecular beam epitaxy. Research on GaAs materials demonstrated doping profiles for peeled film, mixer diodes and low-high-low, millimeter wave IMPATT diodes. Iron has been investigated as a potential MBE dopant for FET buffer layer applications. Although compensated layers exhibiting the Fe2 line at 0.371 eV were obtained for doping oven temperatures less than but close to 1013 C at GaAs growth rates of 1.0 micron per hr. there was unintentional accumulation of iron at the outer surface reserved for the active layer in conventional FET structures. Before initiating the study of quaternary materials, the MBE growth conditions were established for the ternary InxGa1-xAs. Layers of the latter semiconductor grown on GaAs substrates held at 510 C showed significant changes in surface morphology and electrical properties for x greater than but close to 0.3. A cryopumped MBE system containing six oven positions has been developed for growing the quaternary In1-xGaxAsyP1-y which requires relatively intense beams of P molecules. Lattice-matched In1-xGaxAsyP1-y layers have been deposited in this system on 001 GaAs substrates using ovens loaded with Ga, In, As, and GaP. Epitaxy was achieved.

Subject Categories:

  • Crystallography
  • Particle Accelerators

Distribution Statement:

APPROVED FOR PUBLIC RELEASE