Computer Modeling of the Complete IC Fabrication Process.
Final rept. 17 Jan 77-15 Jun 80,
STANFORD UNIV CA
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This research effort has resulted in the development and distribution of the SUPREM program. The overall features of SUPREM allow for process design, fundamental kinetic studies and process control applications. Understanding and quantitative modeling of moving boundary oxidation and epitaxial growth conditions has been achieved. The models for diffusion and epitaxial growth involve multiple species and time dependent kinetic effects. An extensive set of experiments involving oxidation enhanced diffusion has resulted in a new quantitative model including the effects involving growth and retrogrowth of stacking faults. Moreover, the lateral dependence of oxidation enhanced diffusion was demonstrated for the first time and an estimate of a 2 micrometers lateral diffusion length was determined. A new transient epitaxial growth model was incorporated into SUPREM and experimental results for changes over more than two orders of magnitude in dopant concentration have been simulated. It has been demonstrated for the first time that silicon growth transients occur due to surface kinetic effects with a time constant of the same order of magnitude as for the dopant itself. Author
- Manufacturing and Industrial Engineering and Control of Production Systems
- Computer Programming and Software