Accession Number:

ADA089228

Title:

A Transient Capacitance Study of Radiation-Induced Defects in Aluminum- Doped Silicon,

Descriptive Note:

Corporate Author:

STATE UNIV OF NEW YORK AT ALBANY DEPT OF PHYSICS

Report Date:

1979-11-19

Pagination or Media Count:

9.0

Abstract:

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE